preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 FX30SMJ-3 outline drawing dimensions in mm t0-3p mitsubishi pch power mosfet FX30SMJ-3 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. 15.9 max 4.5 1.5 f 3.2 5.0 20.0 19.5 min 2 1.0 5.45 4.4 0.6 2.8 5.45 2 4 4 g 1 1 1 2 2 2 3 3 3 gate drain source drain 4 4 4 C150 20 C30 C120 C30 C30 C120 150 C55 ~ +150 C55 ~ +150 4.8 v gs = 0v v ds = 0v l = 30 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25c) parameter conditions ratings unit ? 4v drive ? v dss ............................................................. C150v ? r ds (on) (max) .............................................. 100m w ? i d .................................................................... C30a ? integrated fast recovery diode (typ.) .........100ns
preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 mitsubishi pch power mosfet FX30SMJ-3 high-speed switching use performance curves 0 40 80 120 160 200 0 200 50 100 150 ? ? ?0 0 ? ? ?0 1 ? ? ? ? ?0 2 ? ? ? ? ?0 1 ? ?0 2 ? ? ? ? ?0 3 ? ? ? ? ? ? ? ? ? tw = 10 m s 100 m s 1ms 10ms dc t c = 25? single pulse 0 ? ? ?2 ?6 ?0 0 ?.0 ?.0 ?.0 ?.0 ?.0 ?v ?.5v v gs = ?0v t c = 25? pulse test ?v ?v 0 ?0 ?0 ?0 ?0 ?0 0 2 4 6 8 10 ?v ?.5v ?v v gs = ?0v p d = 150w t c = 25? pulse test ?v ?v power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns C150 C1.0 C1.5 78 85 C1.17 41.3 11430 674 320 61 99 878 330 C1.0 100 0.1 C0.1 C2.0 100 111 C1.50 C1.5 0.83 i d = C1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = C150v, v gs = 0v i d = C1ma, v ds = C10v i d = C15a, v gs = C10v i d = C15a, v gs = C4v i d = C15a, v gs = C10v i d = C15a, v ds = C10v v ds = C10v, v gs = 0v, f = 1mhz v dd = C80v, i d = C15a, v gs = C10v, r gen = r gs = 50 w i s = C15a, v gs = 0v channel to case i s = C30a, dis/dt = 100a/ m s electrical characteristics (tch = 25c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max.
preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 mitsubishi pch power mosfet FX30SMJ-3 high-speed switching use 0 ?0 ?0 ?0 ?0 ?0 0 2 4 6 8 10 t c = 25? v ds = ?0v pulse test ?0 0 ?0 1 ? ? ? ? ? ? ? ? ?0 2 10 3 2 3 5 7 2 3 5 7 10 2 10 4 2 3 5 7 10 5 ciss coss crss t c h = 25? f = 1mh z v gs = 0v 0 40 80 120 160 200 ?0 0 ?0 1 ? ? ? ? ?0 2 ? ? ? ? v gs = ?v ?0v t c = 25? pulse test ?0 0 ?0 1 ? ? ? ? ? ? ? ? ? 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t c = 25? 125? 75? v ds = ?0v pulse test ?0 0 ? ? ?0 1 ? ?? ? ?0 2 ? ?? ? ? ?? 10 2 2 3 5 7 10 3 2 3 5 7 2 t d(off) t d(on) t f t r t c h = 25? v dd = ?0v v gs = ?0v r gen = r gs = 50 w 0 ? ? ? ? ?0 0 2 4 6 8 10 ?0a ?5a i d = ?5a t c = 25? pulse test on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) (m w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
preliminary notice: this is not a final specification. some parametric limits are subject to change. jan.1999 mitsubishi pch power mosfet FX30SMJ-3 high-speed switching use 0 ? ? ? ? ?0 0 40 80 120 160 200 v ds = ?0v ?0v ?00v t c h = 25? i d = ?0a 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = ?ma 0 ?.8 ?.6 ?.4 ?.2 ?.0 ?0 0 50 100 150 v ds = ?0v i d = ?ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = ?0v i d = 1/2i d pulse test 0 ?0 ?0 ?0 ?0 ?0 0 ?.4 ?.8 ?.2 ?.6 ?.0 t c = 125? 75? 25? v gs = 0v pulse test 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t d = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 single pulse gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?)
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